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this is information on a product in full production. february 2014 docid024993 rev 2 1/23 23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 n-channel 800 v, 3.5 typ., 2 a zener-protected supermesh? 5 power mosfet in dpak, to-220fp, to-220 and ipak packages datasheet ? production data figure 1. internal schematic diagram features ? to-220 worldwide best r ds(on) ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. d(2, tab) g(1) s(3) am01476v1 to-220 1 2 3 tab 1 3 dpak tab to-220fp 1 2 3 3 2 1 ta b ipak order codes v ds r ds(on) max i d p tot std2n80k5 800 v 4.5 2 a 45 w stf2n80k5 20 w stp2n80k5 45 w STU2N80K5 table 1. device summary order codes marking package packaging std2n80k5 2n80k5 dpak tape and reel stf2n80k5 to-220fp tube stp2n80k5 to-220 STU2N80K5 ipak www.st.com
contents std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 2/23 docid024993 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid024993 rev 2 3/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, to-220, ipak to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2 (1) 1. for to-220fp limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 1.3 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 8 a p tot total dissipation at t c = 25 c 45 20 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 60.5 mj dv/dt (3) 3. i sd 2 a, di/dt 100 a/ s, peak v ds v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit dpak to-220fp to-220 ipak r thj-case thermal resistance junction-case 2.78 6.25 2.78 2.78 c/w r thj-pcb thermal resistance junction-pcb 50 (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu. r thj-amb thermal resistance junction-amb 62.5 100
electrical characteristics std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 4/23 docid024993 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v 1 a v ds = 800 v t j =125 c 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1 a 3.5 4.5 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 105 - pf c oss output capacitance - 8 - pf c rss reverse transfer capacitance -0.5- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -16-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -7-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 18 - q g total gate charge v dd = 640 v, i d = 2 a v gs =10 v -9.5- nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge - 7.5 - nc
docid024993 rev 2 5/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 1 a, r g =4.7 , v gs =10 v -8-ns t r rise time - 12 - ns t d(off) turn-off delay time - 19 - ns t f fall time - 32 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 2 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 8 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 2 a, v dd = 60 v di/dt = 100 a/ s, - 255 ns q rr reverse recovery charge - 1 c i rrm reverse recovery current - 8 a t rr reverse recovery time i sd = 2 a,v dd = 60 v di/dt=100 a/ s, tj=150 c - 285 ns q rr reverse recovery charge - 1.45 c i rrm reverse recovery current - 7.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 6/23 docid024993 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100 s 0.01 tj=150c tc = 2 5 c single pulse 10ms 100 am18072v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18073v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18074v1
docid024993 rev 2 7/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 2.5 1.5 0.5 0.0 0 2 v ds (v) 4 (a) 6 6v 7v v gs =10, 11v 1.0 2.0 3.0 8v 9v 8 10 12 14 16 am18075v1 i d 3 2 1 0 5 7 v gs (v) 9 (a) 6 8 10 0.5 1.5 2.5 v ds =20v am18085v1 10 6 4 2 0 0 4 8 2 6 8 10 12 500 300 200 100 0 400 600 q g (nc) v gs (v) v ds v ds (v) am18076v1 r ds(on) 2 1 0 0.0 0.8 i d (a) ( ) 0.4 1.2 3 v gs =10v 1.6 4 5 6 am18077v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 am18078v1 e oss 0 0 v ds (v) ( j) 400 200 2 600 800 am18079v1
electrical characteristics std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 8/23 docid024993 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward characteristics 1.1 0.8 0.6 0.4 t j (c) 0.5 0.7 0.9 1 1.2 -100 0 -50 100 50 150 v gs(th) (norm) am18082v1 i d =100 a 1.5 1 0.5 0 -100 0 t j (c) -50 2 100 50 150 i d =1 a 2.5 v gs =10 v r ds(on) (norm) am18081v1 v ds -100 0 t j (c) (norm) -50 50 100 0.85 0.9 0.95 1 1.05 1.1 i d =1ma am18083v1 v sd 0 1 i sd (a) (v) 0.5 1.5 2 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 am18084v1 figure 18. maximum avalanche energy vs starting t j e as 0 40 t j (c) (mj) 20 100 60 80 0 10 20 30 40 120 140 50 60 am18086v1
docid024993 rev 2 9/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 test circuits 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 10/23 docid024993 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024993 rev 2 11/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 package mechanical data figure 25. dpak (to-252) type a drawing 0068772_m_type_a
package mechanical data std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 12/23 docid024993 rev 2 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid024993 rev 2 13/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 package mechanical data figure 26. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters footprint_rev_m_type_a
package mechanical data std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 14/23 docid024993 rev 2 figure 27. to-220fp drawing 7012510_rev_k_b
docid024993 rev 2 15/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 16/23 docid024993 rev 2 figure 28. to-220 drawing bw\sh$b5hyb7
docid024993 rev 2 17/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 package mechanical data table 11. to-220 mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 18/23 docid024993 rev 2 figure 29. ipak (to-251) drawing 0068771_k
docid024993 rev 2 19/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 package mechanical data table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
packaging information std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 20/23 docid024993 rev 2 5 packaging information figure 30. tape for dpak p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid024993 rev 2 21/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 packaging information figure 31. reel for dpak table 13. dpak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 22/23 docid024993 rev 2 6 revision history table 14. document revision history date revision changes 11-jul-2013 1 first release. 18-feb-2014 2 ? added: ipak package ? modified: e as value in table 2 ? modified: r thj-case in table 3 ? modified: typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: figure 25 , 26 and table 9 ? added: table 12 and figure 29 ? minor text changes
docid024993 rev 2 23/23 std2n80k5, stf2n80k5, stp2n80k5, STU2N80K5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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